UMF8N transistors 1/4 power management (dual transistors) UMF8N 2sc5585 and dtc144ee are housed independently in a umt package. ! ! ! ! application power management circuit ! ! ! ! features 1) power switching circuit in a single package. 2) mounting cost and area can be cut in half. ! ! ! ! structure silicon epitaxial planar transistor ! ! ! ! equivalent circuits r 1 r 2 dtr2 tr1 (1) (2) (3) (4) (5) (6) r1=47k ? r2=47k ? ! ! ! ! external dimensions (units : mm) rohm : umt6 eiaj : sc-88 0 ~ 0.1 ( 6 ) 2.0 1.3 0.9 0.15 0.7 0.1min. 2.1 0.65 0.2 1.25 ( 1 ) 0.65 ( 4 ) ( 3 ) ( 2 ) ( 5 ) each lead has same dimensions ! ! ! ! package, marking, and packaging specifications type UMF8N umt6 f8 tr 3000 package marking code basic ordering unit (pieces)
UMF8N transistors 2/4 ! ! ! ! absolute maximum ratings (ta=25 c) tr1 parameter ? 1 single pulse p w =1ms ? 2 120mw per element must not be exceeded. each terminal mounted on a recommended land. symbol v cbo v ceo v ebo i c i cp p c tj tstg limits 15 12 6 500 150(total) 150 ? 55~ + 150 1.0 ? 1 ? 2 unit v v v ma a mw c c collector-base voltage collector-emitter voltage emitter-base voltage collector current power dissipation junction temperature range of storage temperature dtr2 parameter ? 1 characteristics of built-in transistor. ? 2 120mw per element must not be exceeded. each terminal mounted on a recommended land. symbol v cc v in i c i o p c tj tstg limits 50 ? 10~ + 40 100 30 150(total) 150 ? 55~ + 150 ? 1 ? 2 unit v v ma ma mw c c supply voltage input voltage collector current output current power dissipation junction temperature range of storage temperature ! ! ! ! electrical characteristics (ta=25 c) tr1 parameter symbol min. typ. max. unit conditions v cb = 10v, i e = 0ma, f = 1mhz transition frequency f t ? 320 ? mhz v ce = 2v, i e =? 10ma, f = 100mhz bv ceo 12 ?? v i c = 1ma collector-emitter breakdown voltage bv cbo 15 ?? v i c = 10 a collector-base breakdown voltage bv ebo 6 ?? v i e = 10 a emitter-base breakdown voltage i cbo ?? 100 na v cb = 15v collector cut-off current i ebo ?? 100 na v eb = 6v emitter cut-off current v ce(sat) ? 100 250 mv i c = 200ma, i b = 10ma collector-emitter saturation voltage h fe 270 ? 680 ? v ce = 2v, i c = 10ma dc current gain cob ? 7.5 ? pf collector output capacitance dtr2 parameter symbol min. typ. max. unit conditions ? transition frequency f t ? 250 ? mhz v ce = 10v, i e = 5ma, f = 100mhz ? characteristics of built-in transistor. v i(off) ?? 0.5 v v cc = 5v, i o = 100 a input voltage v i(on) 3.0 ?? v v o = 0.3v, i o = 2ma v o(on) ? 100 300 mv v o = 10ma, i i = 0.5ma output voltage i i ?? 180 av i = 5v input current i o(off) ?? 500 na v cc = 50v, v i = 0v output current r 1 32.9 47 61.1 k ? ? input resistance g i 68 ?? ? v o = 5v, i o = 5ma dc current gain ? r 2 /r 1 0.8 1.0 1.2 ? resistance ratio
UMF8N transistors 3/4 ! ! ! ! electrical characteristic curves tr1 fig.1 grounded emitter propagation characteristics 0 1 100 1000 10 base to emitter voltage : v be (v) collector current : i c (ma) 1.4 1.0 1.2 0.4 0.6 0.8 0.2 v ce =2v pulsed ta=125 c ta=25 c ta= ? 40 c 1 10 100 1000 collector current : i c (ma) fig.2 dc current gain vs. collector current 1 dc current gain : h fe 10 1000 100 ta = 125 c ta =? 40 c ta = 25 c v ce = 2v pulsed fig.3 collector-emitter saturation voltage vs. collector current ( ) 1 10 100 1000 collector current : i c (ma) 1 collector saturation voltage : v ce(sat) (mv) 10 1000 100 ta=25 c pulsed i c /i b = 50 i c /i b = 20 i c /i b = 10 fig.4 collector-emitter saturation voltage vs. collector current ( ? ) 1 10 100 1000 collector current : i c (ma) 1 collector saturation voltage : v ce (sat) (v) 10 1000 100 ta= 1 25 c 25 c ? 40 c i c /i b = 20 pulsed 1 10 100 1000 collector current : i c (ma) fig.5 base-emitter saturation voltage vs. collector current 10 baser saturation voltage : v be (sat) (mv) 100 10000 1000 ta = 25 c ta =? 40 c ta = 125 c i c /i b = 20 pulsed fig.6 gain bandwidth product vs. emitter current 1 10 100 1000 emitter current : i e (ma) 1 transition frequency : f t (mhz) 10 1000 100 v ce = 2v ta = 25 c pulsed fig.7 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage 1 10 100 0.1 1 10 100 1000 ta = 25 c f = 1mhz i e = 0a collector output capacitance : cob (pf) emitter input capacitance : cib (pf) collector to base voltage : v cb ( v) cib cob 0.01 0.1 1 10 100 emitter current : v ce (v) fig.8 safe operation area 0.001 transition frequency : i c (a) 0.01 10 0.1 1 ta = 25 c single pulsed dc 100ms 10ms 1ms
UMF8N transistors 4/4 dtr2 v o = 0.3v 100 200 500 1m 2m 5m 10m 20m 50m 100m 100 50 20 10 5 2 1 500m 200m 100m input voltage : v i(on) (v) output current : i o (a) fig.9 input voltage vs. output current (on characteristics) 25 c 100 c ta =? 40 c v cc = 5v 0.5 1.0 1.5 2.0 2.5 3.0 0 10m 5m 2m 1m 500 200 100 50 20 10 5 1 2 input voltage : v i(off) (v) output current : io (a) fig.10 output current vs. input voltage (off characteristics) ta = 100 c 25 c ? 40 c output current : i o (a) dc current gain : g i v o = 5v 100 200 500 1m 2m 5m 10m 20m 50m 100m 1k 500 200 100 50 20 10 5 2 1 fig.11 dc current gain vs. output current ta = 100 c 25 c ? 40 c 100 200 500 1m 2m 5m 10m 20m 50m 100m 1 500m 200m 100m 50m 20m 10m 5m 2m 1m l o /l i = 20 output current : i o (a) output voltage : v o(on) (v) fig.12 output voltage vs. output current ta = 100 c 25 c ? 40 c
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